Ukuvula amandla ezixhobo ezisemgangathweni ophezulu: I-Trimethylaluminium kunye ne-trimethylgallium zikhuthaza ukuveliswa kwezinto ezintsha kwezoshishino.
Kwixesha lophuhliso olukhawulezayo lwemizi-mveliso yehlabathi ekumgangatho ophezulu kunye namashishini e-elektroniki, i-trimethylaluminum (TMA, Al(CH3)3) kunye ne-trimethylgallium (TMG, Ga(CH3)3) njengeekhompawundi zentsimbi esisiseko (imithombo ye-MO) ziba yintsika yokuvelisa izinto ezintsha kwicandelo le-catalysis, ii-semiconductors, ii-photovoltaics kunye nee-LED ezineempawu zazo ezintle zeekhemikhali kunye nexabiso lokusetyenziswa elingenakutshintshwa. Ngenxa yokuphucula amandla ayo obuchwephesha rhoqo kunye nochungechunge lokubonelela oluzinzileyo nolusebenzayo, iTshayina iba yindawo ephakamileyo yesicwangciso sokubonelela nge-trimethylaluminum kunye ne-trimethylgallium kwihlabathi liphela.
Isiseko se-catalysis: igalelo elibalaseleyo lei-trimethylaluminum
Ukususela ekuzalweni kwetekhnoloji ye-catalytic yeZiegler-Natta, iikhompawundi ze-organoaluminum ziye zaba ngamandla aphambili okuqhuba imveliso yee-polyolefins (ezifana ne-polyethylene kunye ne-polypropylene). Phakathi kwazo, i-methylaluminoxane (MAO), ephuma kwi-trimethylaluminum ecocekileyo kakhulu, njenge-co-catalyst ephambili, isebenza ngokufanelekileyo kwii-catalysts ezahlukeneyo zesinyithi zotshintsho kwaye iqhuba inkqubo enkulu yehlabathi ye-polymerization. Ubunyulu kunye nokusebenza kwakhona kwe-trimethylaluminum kumisela ngokuthe ngqo ukusebenza kwenkqubo ye-catalytic kunye nomgangatho we-polymer yokugqibela.
Izinto eziphambili zokuvelisa i-semiconductor kunye ne-photovoltaic
Kwicandelo lokuvelisa iitshiphusi ze-semiconductor, i-trimethylaluminium ngumthombo we-aluminium oyimfuneko. Isebenzisa iinkqubo ze-chemical vapor deposition (CVD) okanye i-atomic layer deposition (ALD) ukuze ifake ngokuchanekileyo ukusebenza okuphezulu.i-aluminium oxide (Al2O3))iifilimu ezihlala zisebenza ngombane ophezulu (high-k) zamasango e-transistor aphucukileyo kunye neeseli zememori. Iimfuneko zobumsulwa be-trimethylaluminium zingqongqo kakhulu, kugxilwe kakhulu kumxholo wokungcola kwesinyithi, ukungcola okuqulethe ioksijini, kunye nokungcola kwendalo ukuqinisekisa iipropati zombane ezibalaseleyo kunye nokuthembeka kwefilimu.
Kwangaxeshanye, i-trimethylaluminum yeyona nto ikhethwayo yokukhula kwee-semiconductors eziqulathe i-aluminium (ezifana ne-AlAs, i-AlN, i-AlP, i-AlSb, i-AlGaAs, i-AlGaN, i-AlInGaP, i-AlInGaN, njl.njl.) ngetekhnoloji ye-metal organic vapor phase epitaxy (MOVPE). Ezi zinto zenza isiseko sonxibelelwano olukhawulezayo, izixhobo ze-elektroniki zamandla, kunye nezixhobo ze-optoelectronic ezinzulu ze-ultraviolet.
Kwishishini le-photovoltaic, i-trimethylaluminum ikwadlala indima ebalulekileyo. Ngenkqubo ye-plasma-enhanced chemical vapor deposition (PECVD) okanye i-ALD, i-trimethylaluminum isetyenziselwa ukwenza umaleko we-aluminium oxide (Al2O3) yomgangatho ophezulu. Lo maleko we-passivation unokunciphisa kakhulu ukulahleka kwe-recombination kumphezulu weeseli zelanga ze-silicon ezikristali, ngaloo ndlela uphucula kakhulu ukusebenza kakuhle kokuguqulwa kweeseli. Yenye yeenkqubo eziphambili ekwenziweni kweeseli zelanga ezisebenzayo kakhulu.
Ukukhanyisa ikamva: ii-LED kunye nezixhobo ze-optoelectronic eziphambili
Ishishini le-LED elikhulayo lixhomekeke kakhulu kwi-trimethylaluminium kunye ne-trimethylgallium. Kwi-LED epitaxial growth (MOVPE):
* I-Trimethylaluminum sisiseko esiphambili sokukhulisa iileya ze-III-V ze-semiconductor epitaxial eziqulathe i-aluminium ezifana ne-aluminium gallium nitride (AlGaN), ezisetyenziselwa ukuvelisa ii-LEDs kunye ne-laser ezisebenza kakuhle. Ikwasetyenziselwa ukufaka iileya ze-Al2O3 okanye ze-AlN passivation ukuphucula ukusebenza kakuhle kokukhupha ukukhanya kunye nokuthembeka kwezixhobo.
*I-Trimethylgallium (TMG)yeyona mthombo ubalulekileyo novuthiweyo we-gallium kwinkqubo ye-MOVPE. Yinto ephambili yokulungiselela iintlobo ezahlukeneyo zee-semiconductors eziqulathe i-gallium, kuquka:
* I-Gallium Nitride (GaN): Ilitye lesiseko lee-LED eziluhlaza okwesibhakabhaka nezimhlophe, ii-laser (LDs), kunye nezixhobo ze-elektroniki ezinamandla aphezulu.
* I-Gallium arsenide (GaAs): Isetyenziswa kakhulu kwizixhobo ze-elektroniki ezikhawulezayo, izinto zerediyo, iiseli zelanga ezisebenza kakuhle kakhulu, kunye nezixhobo ze-optoelectronic ezikufutshane ne-infrared.
* I-Gallium phosphide (GaP) kunye ne-gallium antimonide (GaSb): Zibaluleke kakhulu kwiinkalo ze-LED ezibomvu, ezimthubi neziluhlaza, ii-photodetectors, njl.njl.
* I-Copper Indium Gallium Selenide (CIGS): izinto ezisetyenziswa kakhulu ekutsaleni ukukhanya ezisetyenziselwa ukwenza iiseli zelanga ezithambileyo nezisebenza kakuhle.
Ubunyulu kunye nokuzinza kwe-trimethylgallium kumisela ngokuthe ngqo umgangatho wekristale kunye neempawu zombane/zokukhanya zomaleko we-epitaxial, nto leyo ekugqibeleni echaphazela ukukhanya, ukuhambelana kwamaza ombane, kunye nobomi be-LED. I-Trimethylgallium ikwasetyenziselwa ukulungiselela izixhobo eziphambili zefilimu ezincinci ezifana neGaAs, GaN, kunye neGaP, ezikhonza izixhobo ze-microelectronics kunye nezixhobo ze-high-frequency.
Ubonelelo lwaseTshayina: isiqinisekiso somgangatho, uzinzo, kunye nokusebenza kakuhle
I-China yenze inkqubela phambili enkulu kwicandelo leegesi ezikhethekileyo ze-elektroniki ezicocekileyo kakhulu kunye nemithombo ye-MO, kwaye ibonakalise iingenelo ezinamandla zokhuphiswano ekunikezelweni kwe-trimethylaluminium kunye ne-trimethylgallium:
1. Inkqubo yokucoca esemgangathweni: Iinkampani eziphambili zasekhaya zinobuchule obuphezulu bokuhluza ngokuqhubekayo, ukufunxa, ukucocwa kobushushu obuphantsi kunye nezinye iiteknoloji, kwaye zinokuvelisa ngokuzinzileyo i-trimethylaluminum kunye ne-trimethylgallium ecocekileyo kakhulu ye-6N (99.9999%) nangaphezulu, zilawula ngokungqongqo ukungcola kwesinyithi (okufana ne-Na, K, Fe, Cu, Zn), ukungcola okuneoksijini (okufana neehydrocarbons ezineoksijini) kunye nokungcola kwendalo (okufana ne-ethylaluminum, i-dimethylaluminum hydride), kwaye zihlangabezana ngokupheleleyo neemfuno ezingqongqo zokukhula kwe-semiconductor kunye ne-LED epitaxial.
2. Ubonelelo oluzinzileyo nolulinganiselweyo: Inkxaso epheleleyo yetyathanga lemizi-mveliso kunye nokwanda okuqhubekayo kwamandla emveliso kuqinisekisa unikezelo olukhulu, oluzinzileyo, noluthembekileyo lwe-trimethylaluminum kunye ne-trimethylgallium kwimarike yehlabathi, oluxhathisa ngempumelelo imingcipheko yetyathanga lobonelelo.
3. Iingenelo zeendleko nokusebenza kakuhle: Imveliso yasekhaya inciphisa kakhulu iindleko zizonke (kuquka uthutho, iirhafu, njl.njl.) ngelixa ibonelela ngenkxaso yobugcisa kunye neenkonzo zasekhaya eziguquguqukayo neziphendulayo.
4. Uphuhliso oluqhubekayo oluqhutywa yimveliso entsha: Iinkampani zaseTshayina ziyaqhubeka nokutyala imali kuphando nophuhliso, ziphucula rhoqo iinkqubo zemveliso ye-trimethylaluminium kunye ne-trimethylgallium, ziphucula umgangatho wemveliso kunye nokusebenza kwesicelo, kwaye ziphuhlise ngenkuthalo iinkcukacha ezintsha zeemveliso ezihlangabezana neemfuno zobuchwepheshe besizukulwana esilandelayo (ezifana ne-Micro-LED, ii-node semiconductors eziphambili, kunye neeseli zelanga ezihlanganisiweyo ezisebenzayo kakhulu).
Isiphelo
Njenge "zizakhi zofuzo zezinto ezibonakalayo" zamashishini anamhlanje akumgangatho ophezulu, i-trimethylaluminum kunye ne-trimethylgallium zidlala indima engenakutshintshwa kwicandelo le-catalytic polymerization, ii-semiconductor chips, ii-photovoltaics ezisebenzayo kakhulu, kunye ne-optoelectronics eziphambili (i-LED/LD). Ukukhetha i-trimethylaluminum kunye ne-trimethylgallium ezivela eTshayina akupheleli nje ekukhetheni iimveliso zobunyulu obuphezulu kakhulu ezihlangabezana nemigangatho ephezulu yehlabathi, kodwa kukwakhetha iqabane elinobuchule elineziqinisekiso ezinamandla zokuvelisa, amandla okuvelisa izinto ezintsha ngokuqhubekayo, kunye namandla okuphendula ngenkonzo ngokufanelekileyo. Yamkela i-trimethylaluminum kunye ne-trimethylgallium ezenziwe eTshayina, ngokudibeneyo zixhobise ukuphuculwa kwemizi-mveliso, kwaye ziqhube umda wetekhnoloji yexesha elizayo!