Kushicilelwe ngo-Agasti 9, 2024, ngo-15:30 EE Times Japan
Iqembu locwaningo elivela eJapan Hokkaido University lihlanganise ndawonye i-“oxide thin-film transistor” enokunyakaza kwe-electron okungu-78cm2/Vs kanye nokuqina okuhle kakhulu neKochi University of Technology. Kuzokwazi ukushayela izikrini zama-TV esizukulwane esilandelayo e-8K OLED.
Ubuso befilimu encane engqimba esebenzayo bumbozwe ngefilimu evikelayo, okuthuthukisa kakhulu ukuzinza
Ngo-Agasti 2024, iqembu locwaningo elihlanganisa uSolwazi Osizayo uYusaku Kyo noSolwazi Hiromichi Ota we-Research Institute for Electronic Science, eNyuvesi yaseHokkaido, ngokubambisana noSolwazi Mamoru Furuta weSikole Sesayensi Nobuchwepheshe, eNyuvesi Yezobuchwepheshe yaseKochi, bamemezele ukuthi bathuthukise “i-transistor yefilimu encane ye-oxide” enokuhamba kwe-electron okungu-78cm2/Vs kanye nokuqina okuhle kakhulu. Kuzokwazi ukushayela izikrini zama-TV e-8K OLED esizukulwane esilandelayo.
Ama-TV e-4K OLED amanje asebenzisa ama-transistor e-oxide-IGZO thin-film (a-IGZO TFTs) ukushayela izikrini. Ukuhamba kwama-electron kwale transistor kungaba ngu-5 kuya ku-10 cm2/Vs. Kodwa-ke, ukushayela isikrini se-TV ye-8K OLED yesizukulwane esilandelayo, kudingeka i-transistor ye-oxide thin-film ehamba ngama-electron engu-70 cm2/Vs noma ngaphezulu.
Umsizi kaSolwazi uMago kanye nethimba lakhe bathuthukise i-TFT enokunyakaza kwama-electron okungu-140 cm2/Vs 2022, besebenzisa ifilimu elincane le-i-indium oxide (In2O3)kwesendlalelo esisebenzayo. Kodwa-ke, asizange sisetshenziswe ngokoqobo ngoba ukuzinza kwaso (ukuthembeka) kwakuphansi kakhulu ngenxa yokumuncwa kanye nokumuncwa kwama-molecule egesi emoyeni.
Kulokhu, iqembu locwaningo lanquma ukumboza ubuso bengqimba esebenzayo encane ngefilimu evikelayo ukuvimbela igesi ukuthi ingamuncwa emoyeni. Imiphumela yokuhlolwa ibonise ukuthi ama-TFT anamafilimu avikelayoi-yttrium oxidefuthii-erbium oxideibonise ukuzinza okuphezulu kakhulu. Ngaphezu kwalokho, ukuhamba kwama-electron kwakungu-78 cm2/Vs, futhi izici azizange zishintshe ngisho nalapho i-voltage engu-±20V isetshenziswa amahora angu-1.5, ihlala izinzile.
Ngakolunye uhlangothi, ukuzinza akuzange kuthuthuke kuma-TFT asebenzisa i-hafnium oxide nomai-aluminium oxidenjengamafilimu avikelayo. Lapho kubhekwa ukuhlelwa kwe-athomu kusetshenziswa i-electron microscope, kwatholakala ukuthii-indium oxide futhii-yttrium oxide zaziboshwe ngokuqinile ezingeni le-athomu (ukukhula kwe-heteroepitaxial). Ngokuphambene nalokho, kwaqinisekiswa ukuthi kuma-TFT okuzinza kwawo okungathuthukanga, ukuxhumana phakathi kwe-indium oxide nefilimu evikelayo kwakungaguquki.