Ipapashwe ngo-Agasti 9, 2024, ngo-15:30 EE Times Japan
Iqela lophando elivela kwiYunivesithi yaseJapan iHokkaido lidibene ngokudibeneyo liphuhlise i-"oxide thin-film transistor" enokuhamba kwe-electron kwe-78cm2/Vs kunye nozinzo oluhle kakhulu neYunivesithi yeTekhnoloji yaseKochi. Kuya kuba nokwenzeka ukuqhuba izikrini zeeTV ze-8K OLED zesizukulwana esilandelayo.
Umphezulu wefilimu ebhityileyo yomaleko osebenzayo ugqunywe yifilimu ekhuselayo, nto leyo ephucula kakhulu uzinzo
Ngo-Agasti 2024, iqela lophando eliquka uNjingalwazi oNcedisayo uYusaku Kyo kunye noNjingalwazi uHiromichi Ota we-Research Institute for Electronic Science, kwiYunivesithi yaseHokkaido, ngokubambisana noNjingalwazi uMamoru Furuta weSikolo seSayensi neTekhnoloji, kwiYunivesithi yaseKochi yeTekhnoloji, babhengeze ukuba baphuhlise "i-transistor yefilimu encinci ye-oxide" ene-electron mobility ye-78cm2/Vs kunye nozinzo oluhle kakhulu. Kuya kuba nakho ukuqhuba izikrini zeeTV ze-8K OLED zesizukulwana esilandelayo.
IiTV ze-4K OLED zangoku zisebenzisa ii-transistors ze-oxide-IGZO thin-film (a-IGZO TFTs) ukuqhuba izikrini. Ukuhamba kwee-electron kwale transistor kumalunga ne-5 ukuya kwi-10 cm2/Vs. Nangona kunjalo, ukuqhuba isikrini se-TV ye-8K OLED yesizukulwana esilandelayo, kufuneka i-transistor ye-oxide thin-film ene-electron mobility ye-70 cm2/Vs okanye ngaphezulu.
Umncedisi kaNjingalwazi uMago kunye neqela lakhe baphuhlise i-TFT enokuhamba kwe-electron eyi-140 cm2/Vs 2022, besebenzisa ifilimu encinci yei-indium oxide (In2O3)kwi-active layer. Nangona kunjalo, ayizange isetyenziswe kuba ukuzinza kwayo (ukuthembeka) kwakungaphucukanga kakhulu ngenxa yokufunxwa nokufunxwa kwee-molecule zegesi emoyeni.
Ngeli xesha, iqela lophando ligqibe ekubeni ligubungele umphezulu womaleko osebenzayo obhityileyo ngefilimu yokukhusela ukuthintela ukuba igesi ingafunxwa emoyeni. Iziphumo zovavanyo zibonise ukuba ii-TFT ezineefilimu zokukhusela zei-yttrium oxidekwayei-erbium oxideibonakalise uzinzo oluphezulu kakhulu. Ngaphezu koko, ukuhamba kwee-electron kwakuyi-78 cm2/Vs, kwaye iimpawu azizange zitshintshe nangona i-voltage ye-±20V isetyenzisiwe iiyure ezili-1.5, ihlala izinzile.
Kwelinye icala, uzinzo aluzange luphucuke kwii-TFT ezazisebenzisa i-hafnium oxide okanyei-aluminium oxidenjengeefilimu ezikhuselayo. Xa kwajongwa ulungelelwaniso lweathomu kusetyenziswa imakroskopu ye-electron, kwafunyaniswa ukubai-indium oxide kwayei-yttrium oxide zazibotshelelwe ngokuqinileyo kwinqanaba le-athomu (ukukhula kwe-heteroepitaxial). Ngokwahlukileyo koko, kwaqinisekiswa ukuba kwii-TFT ezizinzileyo zingaphucukanga, unxibelelwano phakathi kwe-indium oxide kunye nefilimu ekhuselayo belungenasimo.