
| I-Boron | |
| Ukubukeka | Omnyama-onsundu |
| Isigaba ku-STP | Okuqinile |
| Indawo yokuncibilika | 2349 K (2076 °C, 3769 °F) |
| Indawo yokubilisa | 4200 K (3927 °C, 7101 °F) |
| Ubuningi uma buyi-liquid (at mp) | 2.08 g/cm3 |
| Ukushisa kokuhlanganiswa | 50.2 kJ/mol |
| Ukushisa kokushisa | 508 kJ/mol |
| Umthamo wokushisa we-molar | 11.087 J/(mol·K) |
I-Boron iyisakhi se-metalloid, esinama-allotropes amabili, i-amorphous boron kanye ne-crystalline boron. I-Amorphous boron iyimpuphu ensundu kuyilapho i-crystalline boron inombala wesiliva kuya komnyama. Ama-crystalline boron granules kanye nezingcezu ze-boron ziyi-boron emsulwa kakhulu, ziqinile kakhulu, futhi azikwazi ukuqondisa kahle izinga lokushisa legumbi.
I-Crystalline Boron
Uhlobo lwekristalu lwe-boron ekristalu luyi-β-form ikakhulukazi, ehlanganiswa kusuka ku-β-form kanye ne-γ-form ibe yi-cube ukuze kwakhiwe isakhiwo sekristalu esiqinile. Njenge-boron ekristalu eyenzeka ngokwemvelo, ubuningi bayo bungaphezu kuka-80%. Umbala ngokuvamile uyimpuphu ensundu ngokumpunga noma izinhlayiya ezinsundu ezimise ngendlela engajwayelekile. Usayizi wezinhlayiya ezivamile zempuphu ye-boron ekristalu othuthukiswe futhi wahlelwa yinkampani yethu ungama-15-60μm; usayizi wezinhlayiya ezivamile zezinhlayiya ze-boron ekristalu ungama-1-10mm (usayizi wezinhlayiya ezikhethekile ungenziwa ngokwezifiso ngokwezidingo zamakhasimende). Ngokuvamile, ihlukaniswe ngezincazelo ezinhlanu ngokuya ngobumsulwa: 2N, 3N, 4N, 5N, kanye no-6N.
Imininingwane Yebhizinisi Le-Crystal Boron
| Umkhiqizo | Okuqukethwe kwe-B (%)≥ | Okuqukethwe kokungcola (PPM) ≤ | ||||||||||
| Fe | Au | Ag | Cu | Sn | Mn | Ca | As | Pb | W | Ge | ||
| UMCB6N | 99.9999 | 0.5 | 0.02 | 0.03 | 0.03 | 0.08 | 0.07 | 0.01 | 0.01 | 0.02 | 0.02 | 0.04 |
| UMCB5N | 99.999 | 8 | 0.02 | 0.03 | 0.03 | 0.1 | 0.1 | 0.1 | 0.08 | 0.08 | 0.05 | 0.05 |
| UMCB4N | 99.99 | 90 | 0.06 | 0.3 | 0.1 | 0.1 | 0.1 | 1.2 | 0.2 | |||
| UMCB3N | 99.9 | 200 | 0.08 | 0.8 | 10 | 9 | 3 | 18 | 0.3 | |||
| UMCB2N | 99 | 500 | 2.5 | 1 | 12 | 30 | 300 | 0.08 | ||||
Iphakheji: Ngokuvamile ipakishwa emabhodleleni e-polytetrafluoroethylene futhi ivalwe ngegesi engasebenzi, enezincazelo ezingu-50g/100g/ibhodlela;
I-Amorphous Boron
I-boron e-Amorphous ibizwa nangokuthi i-boron engeyona i-crystalline. Uhlobo lwayo lwekristalu luyi-α, olungokwesakhiwo sekristalu ye-tetragonal, futhi umbala walo umnyama onsundu noma ophuzi kancane. Impuphu ye-boron e-amorphous eyenziwe futhi yahlelwa yinkampani yethu iwumkhiqizo osezingeni eliphezulu. Ngemva kokucubungula okujulile, okuqukethwe kwe-boron kungafinyelela ku-99%, 99.9%; usayizi wezinhlayiya ezivamile ungu-D50≤2μm; ngokwezidingo ezikhethekile zosayizi wezinhlayiya zamakhasimende, i-sub-nanometer powder (≤500nm) ingacutshungulwa futhi yenziwe ngokwezifiso.
Ukucaciswa Kwebhizinisi Le-Amorphous Boron
| Umkhiqizo | Okuqukethwe kwe-B (%)≥ | Okuqukethwe kokungcola (PPM) ≤ | |||||||
| Fe | Au | Ag | Cu | Sn | Mn | Ca | Pb | ||
| I-UMAB3N | 99.9 | 200 | 0.08 | 0.8 | 10 | 9 | 3 | 18 | 0.3 |
| I-UMAB2N | 99 | 500 | 2.5 | 1 | 12 | 30 | 300 | 0.08 | |
Iphakheji: Ngokuvamile, ipakishwa ezikhwameni ze-vacuum aluminium foil ezinemininingwane engu-500g/1kg (impuphu ye-nano ayivalwanga);
I-Isotope ¹¹B
Ubuningi bemvelo be-isotope ¹¹B bungu-80.22%, futhi iyi-dopant esezingeni eliphezulu kanye ne-diffuser yezinto ze-semiconductor chip. Njenge-dopant, i-¹¹B ingenza ama-ion e-silicon ahlelwe ngokujiyile, asetshenziselwa ukukhiqiza amasekethe ahlanganisiwe nama-microchip aphezulu, futhi inomphumela omuhle ekuthuthukiseni ikhono lokuphazamiseka kwemisebe yamadivayisi e-semiconductor. I-isotope ye-¹¹B eyenziwe futhi yahlelwa yinkampani yethu iyi-isotope yekristalu emise okwe-cubic β enokuhlanzeka okuphezulu kanye nobuningi obukhulu, futhi iyinto eluhlaza ebalulekile yama-chip aphezulu.
Ukucaciswa Kwebhizinisi le-Isotope¹¹B
| Umkhiqizo | Okuqukethwe kwe-B (%)≥) | Ubuningi (90%) | Usayizi wezinhlayiya (mm) | Isaziso |
| I-UMIB6N | 99.9999 | 90 | ≤2 | Singakwazi ukwenza ngezifiso imikhiqizo ngobuningi obuhlukahlukene kanye nosayizi wezinhlayiya ngokuya ngezidingo zomsebenzisi |
Iphakheji: Ipakishwe ebhodleleni le-polytetrafluoroethylene, eligcwele ukuvikelwa kwegesi okungasebenzi, 50g/ibhodlela;
I-Isotope ¹ºB
Ubuningi bemvelo be-isotope ¹ºB bungu-19.78%, okuwuhlobo oluhle kakhulu lokuvikela i-nuclear, ikakhulukazi olunomphumela omuhle wokumunca kuma-neutron. Lungenye yezinto zokusetshenziswa ezidingekayo emishinini yemboni yenuzi. I-isotope ye-¹ºB eyakhiwe futhi yakhiqizwa yinkampani yethu ingeye-isotope yekristalu enomumo we-cubic β, enezinzuzo zokuhlanzeka okuphezulu, ubuningi obukhulu kanye nokuhlanganiswa okulula nezinsimbi. Luwuhlobo oluyinhloko lokusetshenziswa kwemishini ekhethekile.
Ukucaciswa Kwebhizinisi le-Isotope¹ºB
| Umkhiqizo | Okuqukethwe kwe-B (%)≥) | Ubuningi(%) | Usayizi wezinhlayiya (μm) | Usayizi wezinhlayiya (μm) |
| I-UMIB3N | 99.9 | 95,92,90,78 | ≥60 | Singakwazi ukwenza ngezifiso imikhiqizo ngobuningi obuhlukahlukene kanye nosayizi wezinhlayiya ngokuya ngezidingo zomsebenzisi |
Iphakheji: Ipakishwe ebhodleleni le-polytetrafluoroethylene, eligcwele ukuvikelwa kwegesi okungasebenzi, 50g/ibhodlela;
I-boron e-Amorphous, i-Boron powder kanye ne-Natural boron isetshenziselwa ini?
Kunezinhlelo zokusebenza eziningi ze-Amorphous boron, i-Boron powder kanye ne-Natural boron. Zisetshenziswa kwezensimbi, kuma-electronics, kwezokwelapha, kwezobumba, embonini yenuzi, embonini yamakhemikhali nakweminye imikhakha.
1. I-boron e-Amorphous isetshenziswa embonini yezimoto njengesivuthisi kuma-airbag kanye nasezintweni zokuqinisa amabhande. I-boron e-Amorphous isetshenziswa kuma-pyrotechnics kanye nama-rocket njengesithasiselo kuma-flares, ama-igniter kanye ne-delay compositions, ama-solid propellant fuel, kanye nama-explosive. Inikeza ama-flares umbala oluhlaza ohlukile.
2. I-boron yemvelo yakhiwe ngama-isotope amabili azinzile, elinye lawo (i-boron-10) linokusetshenziswa okuningana njenge-ejenti yokubamba i-neutron. Isetshenziswa njengesithambisi se-neutron ekulawuleni i-reactor yenuzi, kanye nokuqina kwemisebe.
3. I-elemental boron isetshenziswa njenge-dopant embonini ye-semiconductor, kuyilapho ama-boron compounds edlala indima ebalulekile njengezinto zokwakha ezilula, izibulala-zinambuzane kanye nezilondolozi, kanye nama-reagents okwenziwa kwamakhemikhali.
4. Impuphu ye-boron uhlobo lukaphethiloli wensimbi olunezinga eliphezulu le-gravimetric kanye ne-volumetric calorific, olusetshenziswe kabanzi emikhakheni yezempi njenge-solid propellants, iziqhumane ezinamandla aphezulu, kanye ne-pyrotechnics. Futhi izinga lokushisa lokusha kwempuphu ye-boron lincishiswa kakhulu ngenxa yesimo sayo esingajwayelekile kanye nendawo enkulu ethile;
5. Impuphu ye-boron isetshenziswa njengengxenye ye-alloy emikhiqizweni ekhethekile yensimbi ukwakha ama-alloy nokuthuthukisa izakhiwo zemishini zensimbi. Ingasetshenziswa futhi ukumboza izintambo ze-tungsten noma njengezinto zokugcwalisa ezihlanganisweni ngezinsimbi noma izinto zobumba. I-boron ivame ukusetshenziswa kuma-alloy enhloso ekhethekile ukuqinisa ezinye izinsimbi, ikakhulukazi ama-alloy okushisa okuphezulu.
6. Impuphu ye-boron isetshenziswa njenge-deoxidizer ekuncibilikiseni ithusi elingenawo umoya-mpilo. Inani elincane lempuphu ye-boron liyangezwa ngesikhathi senqubo yokuncibilikisa insimbi. Ngakolunye uhlangothi, isetshenziswa njenge-deoxidizer ukuvimbela insimbi ukuthi ingancibilikiswa ekushiseni okuphezulu. Impuphu ye-boron isetshenziswa njengesithasiselo sezitini ze-magnesia-carbon ezisetshenziswa ezitsheni zokushisa okuphezulu zokwenza insimbi;
7. Ama-Boron Powders nawo ayasiza kunoma yikuphi ukusetshenziswa lapho izindawo eziphakeme zifunwa khona njengokwelashwa kwamanzi kanye nokusetshenziswa kwamaseli kaphethiloli kanye nelanga. Ama-nanoparticles nawo akhiqiza izindawo eziphakeme kakhulu.
8. Impuphu ye-boron nayo iyinto ebalulekile yokusetshenziswa ekukhiqizeni i-boron halide ehlanzekile kakhulu, nezinye izinto zokusetshenziswa ze-boron compound; Impuphu ye-boron ingasetshenziswa futhi njengosizo lokushisela; Impuphu ye-boron isetshenziswa njengesiqalisi sezikhwama zomoya zezimoto;