Ubumsulwa beTantalum (V) oxide (Ta2O5 okanye tantalum pentoxide) 99.99% Cas 1314-61-0
| I-Tantalum Pentoxide | |
| Izithethantonye: | Tantalum(V) oxide, Ditantalum pentoxide |
| Inombolo ye-CAS | 1314-61-0 |
| Ifomula yekhemikhali | I-Ta2O5 |
| Ubunzima be-Molar | 441.893 g/mol |
| Inkangeleko | umgubo omhlophe, ongenavumba |
| Uxinano | i-β-Ta2O5 = 8.18 g/cm3, i-α-Ta2O5 = 8.37 g/cm3 |
| Indawo yokunyibilika | 1,872 °C (3,402 °F; 2,145 K) |
| Ukunyibilika emanzini | ayinamsebenzi |
| Ukunyibilika | Ayinyibiliki kwizinyibilikisi ze-organic kunye noninzi lwee-asidi zeeminerali, iphendula nge-HF |
| Isithuba sebhendi | 3.8–5.3 eV |
| Ukuthambekela kwemagnethi (χ) | −32.0×10−6 cm3/mol |
| Isalathisi sokubonisa ukuchaneka (nD) | 2.275 |
I-High Purity Tantalum Pentoxide ChemicalSpecification
| Isimboli | I-Ta2O5(%min) | Mat yangaphandle. ≤ppm | I-LOI | Ubungakanani | ||||||||||||||||
| Nb | Fe | Si | Ti | Ni | Cr | Al | Mn | Cu | W | Mo | Pb | Sn | U-Al+Ka+Li | K | Na | F | ||||
| UMTO4N | 99.99 | 30 | 5 | 10 | 3 | 3 | 3 | 5 | 3 | 3 | 5 | 5 | 3 | 3 | - | 2 | 2 | 50 | 0.20% | 0.5-2µm |
| UMTO3N | 99.9 | 3 | 4 | 4 | 1 | 4 | 1 | 2 | 10 | 4 | 3 | 3 | 2 | 2 | 5 | - | - | 50 | 0.20% | 0.5-2µm |
Ukupakisha: Kwiidrum zentsimbi ezineplastiki ephindwe kabini evaliweyo ngaphakathi.
Zisetyenziselwa ntoni iiTantalum Oxides kunye neeTantalum Pentoxides?
Iindawo eziphambili zesicelo
1. Izixhobo ze-elektroniki ezisebenzayo
1. I-Substrate yesihluzi se-Acoustic Wave (SAW):
- Izinto ezisisiseko zokwenza iikristale ze-lithium tantalate (LiTaO₃), ezisetyenziselwa ukwenza izihluzi zerediyo kwizixhobo zonxibelelwano eziphathwayo
- Usetyenziso lwesiphelo sendlela: ii-smartphones/iitablethi (inkxaso yebhendi ye-5G), iimodyuli zeGPS, iimitha ezikrelekrele ze-IoT
- Inzuzo yokusebenza: uzinzo lwefrikhwensi ±0.5ppm (-40℃ ukuya ku +85℃)
2. Ii-Semiconductor Precursors:
- Izinto eziluhlaza ezenziwe ngeTantalum carbide (TaC): zokwambathisa izixhobo eziqinileyo (ubulukhuni obuncinci ≥ 2200 HV)
- Ithagethi yokutshiza: I-DRAM capacitor dielectric layer deposition (i-dielectric constant εr = 25-30)
2. Ubuchwepheshe bokuKhangela
1. Inkqubo yokukhanya ephezulu:
- Isincedisi sesalathisi sokuhombisa: Yongeza isalathisi sokuhombisa seglasi ye-optical ukuya kwi-nd=1.75-2.20 (400-700nm)
- Ukwaleka okuncinci kokufunxa: Ukulungiswa kwefilimu echasene nokukhanya (i-extinction coefficient k<0.001@550nm)
2. Izicelo zefayibha ezikhethekileyo:
- Ii-Fiber Bragg Grating dopants: Ziphucula ubushushu ukuya kuthi ga kwi-15pm/°C
- Izixhobo ze-infrared optical: Ukudluliselwa kwe-transmittance kwi-3-5μm mid-infrared band > 92%
3. UkuKhathalela noGuqulo lweMizi-mveliso
1. I-Catalysis yeKhemikhali:
- I-Olefin epoxidation catalyst: izinga lokuguqulwa > 95% (i-reactor yebhedi esisigxina)
- I-Photocatalyst yokuvelisa i-hydrogen emanzini (edityaniswe ne-CdS)
2. Ukuguqulwa kwezinto:
- Izongezo ze-alloy ezimelana nokugqwala: Ukuphucula ukumelana ne-oxidation kwe-alloys ezisekelwe kwi-nickel kwi-1100°C
- Isigaba sokuqinisa iseramikhi: Ukuqina kokuqhekeka kwee-composites ezisekwe kwi-alumina kunyuke ngama-40%
| ipropati | Uluhlu lweparameter | Imigangatho yovavanyo |
| Ibanga lobumsulwa | Ibanga le-elektroniki: 99.95% -99.999% | ICP-MS GB/T 26008 |
| Ulwakhiwo lwekristale | Isigaba se-Orthorhombic/isigaba esingaguqukiyo (ukhetho) | I-XRD ISO 20203 |
| Ukusasazwa kobungakanani bamasuntswana | D50: 0.5-10μm (i-nanoscale ingenziwa ngokwezifiso) | I-SEM ISO 13322-1 |
| Iipropati zeDielectric | Amandla entsimi yokuqhekeka> 600kV/cm | I-IEC 60270 |
| Uzinzo lobushushu | Indawo yokunyibilika: 1872℃±10℃ | I-DSC ISO 1135 7 |
Ukhuseleko kunye nokuThotyelwa kweMithetho
Udidi lwezoThutho: AYINGOZI (inombolo ye-UN ayisebenzi)
Iimfuneko zokugcina: indawo eyomileyo kubushushu begumbi, kuphephe ukudibana ne-asidi enamandla
Isiqinisekiso sokusingqongileyo:
- Iyahambelana neRoHS 3.0 Directive (2015/863/EU)
- Izinto ezingadweliswanga phantsi kwe-REACH SVHC
- Ukuthobela uMgaqo-nkqubo weZimbiwa eziNgxabano (CMRT 6.0)
Ulawulo lwemeko
1. Imigangatho yeBanga:
- Udidi lwe-Optical: ISO 10110-7 udidi lwe-fringe A
- Udidi lwe-elektroniki: Ulawulo lokungcola kwesinyithi lwe-SEMI C8.1
2. Isiqinisekiso sovavanyo:
- Nika ingxelo yohlalutyo olusisiseko lwe-XRF kwibhetshi nganye
- Ukufunyanwa kwendawo yomphezulu we-BET (0.5-10m²/g enokulungiseka)
- Uvavanyo lweRadionuclide (U/Th < 1 ppb)
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Amatyala aqhelekileyo okusetyenziswa
- Umenzi wesihluzo sesitishi se-5G usebenzisa i-Ta₂O₅ yodidi lwe-elektroniki, nto leyo enciphisa ilahleko yokufakwa kwi-1.2dB (ibhendi ye-3.5GHz)
- High-end camera lens manufacturers use optical-grade products to achieve a refractive index of nd=2.15@587.6nm
Izinto ekufuneka ziqwalaselwe
• Ukuphathwa komgubo we-nano kufuneka kuhambelane nemigangatho yokukhusela ukuphefumla ye-ISO 13137
• Ii-crucible ze-Corundum ziyacetyiswa xa kusetyenziswa izinto ezitshisayo kubushushu obuphezulu
• Iingubo ezibonakalayo kufuneka zilawule izinga lokufakwa kwe-deposit libe ngaphantsi kwe-0.5nm/s
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Le nkcazo isekelwe kwiimpawu eziqhelekileyo ze-tantalum pentoxide. Iiparameter ezithile zixhomekeke kwi-COA (ingxelo yokuhlolwa komgangatho).
Izisombululo zobugcisa ezenzelwe wena zinokubonelelwa kwiifom ezikhethekileyo (ii-nanopowders/iithagethi zokutshiza/ii-substrates zekristale enye).
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