Ubungakanani bemarike kunye nomthamo wemveliso ye-hafnium tetrachloride ye-elektroniki eTshayina zikhula rhoqo.
IZiko loPhando lweShishini lokuCinga elitsha laseTshayina likhutshwe nge-5 kaMatshi, ngo-2026
I-hafnium tetrachloride ye-elektroniki ibhekisa kwi-hafnium tetrachloride ecocekileyo kakhulu enobunyulu obuyi-99.95% nangaphezulu.
I-Hafnium tetrachloride, kunye nefomula yemolekyuliI-HfCl4kwaye ubunzima bayo bemolekyuli obuyi-320.302, yipowder emhlophe ekristale. Iyakonakalisa kwaye ingatshisa amehlo nolusu. Ikwacaphukisa inkqubo yokuphefumla. Ineqondo lokunyibilika eliyi-320°C kwaye ingenza i-sublimate ibe yi-sublimate. Inyibilika lula kwizinyibilikisi ze-organic ezifana ne-methanol kunye ne-acetone. Isabela namanzi ukukhupha iigesi ezinobuthi. I-hygroscopic kwaye ibola lula xa ivezwa emoyeni kwaye kufuneka igcinwe kwisikhongozeli esivaliweyo.
“Uphando oluKhethekileyo lweMakethi ye-Electronic Grade Hafnium Tetrachloride yaseTshayina ka-2025 kunye neNgxelo yeSindululo se-Enterprise 'ye-15th Five-Year-Year'” ekhutshwe yiNew Thinking Industry Research Center, i-electronic grade hafnium tetrachloride isetyenziswa kakhulu kwishishini le-semiconductor njengezinto ezisandulela i-semiconductor. Ifakwa kwaye ikhuliswe njengeefilimu ezincinci ezisekelwe kwi-hafnium zisebenzisa iinkqubo ezifana ne-atomic layer deposition (ALD) kunye ne-chemical vapor deposition (CVD). Iifilimu ezincinci ezisekelwe kwi-Hafnium zine-dielectric constant ephezulu, nto leyo eyenza zibe yenye yezinto ezibalulekileyo zokwenza umaleko we-gate dielectric we-transistors ezincinci, ezisebenza kakhulu kwisizukulwana esilandelayo. I-electronic grade hafnium tetrachloride inokuhlangabezana nomkhwa wophuhliso lweenkqubo zokuvelisa ii-chip ezincipha rhoqo, kwaye indawo yayo yemarike iyanda rhoqo. Ukongeza, ngenxa yeempawu zayo ezintle ze-optical, iimpawu ze-mechanical, kunye nokuzinza kobushushu, i-electronic grade hafnium tetrachloride ingasetyenziswa nakwimveliso yeefilimu ezincinci ze-optical, ii-LED ezinamandla aphezulu, izixhobo ze-optoelectronic ezikufutshane ne-infrared, kunye neeceramics zobushushu obuphezulu kakhulu.
Umgangatho wetekhnoloji yokucoca uchaphazela ngokuthe ngqo ubunyulu kunye nomgangatho we-hafnium tetrachloride ye-elektroniki. Kwiminyaka yakutshanje, inani leepatenti ezinxulumene nenkqubo yokucoca kunye nezixhobo zokuvelisa i-hafnium tetrachloride ye-elektroniki eTshayina liye landa, kubandakanya "isixhobo sokulungiselela i-hafnium tetrachloride ye-elektroniki" kunye "nendlela yokucoca i-hafnium tetrachloride ye-elektroniki".
NgoMeyi 2025, kwenziwa isibhengezo sokugunyaziswa kwelungelo lomenzi wechiza "kwindlela yokucoca i-hafnium tetrachloride ye-elektroniki". Phantsi kokhuseleko lwegesi engasebenziyo, i-hafnium tetrachloride eluhlaza ifakwa kwisikhephe se-quartz, kwaye ngeenkqubo ezinje ngokutshiza nge-vacuum, ukufudumeza, ukucocwa kwe-sublimation, kunye nokuqokelelwa kokupholisa, iimveliso ze-hafnium tetrachloride ye-elektroniki enobumsulwa be-5N kunye ne-6N zinokufunyanwa.
Kwimarike yaseTshayina,Ubuchwepheshe be-UrbanMines.I-limited ikakhulu iphanda, iphuhlisa, kwaye ibonelela ngeemveliso ze-hafnium tetrachloride ze-elektroniki ezine-purity ye-≥99.9%, 99.95%, kunye ne-≥99.99%.
Abahlalutyi beshishini eNewthink, amandla emveliso ye-hafnium tetrachloride ye-elektroniki eTshayina asakhula. NgoMeyi 2025, i-National Environmental Protection Administration yaseTshayina yatyhila ukuba ingxelo yempembelelo yokusingqongileyo ye-"Semiconductor New Materials Pilot Plant Project" yayiza kuvunywa kwaye ipapashwe, kwaye ezinye iinkampani eziphambili kushishino nazo ziyanda ngenkuthalo ziye kwimarike ye-hafnium tetrachloride ye-elektroniki.