Kuvhura Semiconductor Silicon Revolution: Simba reChina muHigh-Purity 6N Crystal Boron Dopants
Padanho repamusoro rekugadzira nemazvo, kukwira kwese kwese mu semiconductor silicon kunotanga nekudzora kwakarurama padanho reatomu. Kiyi yekuzadzisa kutonga uku iri muma crystalline boron dopants ane purity yakanyanya. Sechinhu chakakosha cheindasitiri yemagetsi yepasi rose, 6N crystalline boron (purity ≥99.9999%), ine hunhu hwayo husingatsiviwe, yave "mugadziri asingaonekwe" achiumba machipisi emazuva ano nemidziyo yemagetsi.
Sei 6N iri crystallineboron"nzira yehupenyu" yesilicon ye semiconductor?
"Switch" yemhando yeP chaiyo: Kana maatomu e6N boron akaiswa zvakananga mu semiconductor silicon lattice, anogadzira "maburi" akakosha anopa silicon wafer yayo yemhando yeP. Iyi ndiyo hwaro hwekuvaka madiode, ma field-effect transistors (FETs), uye kunyange ma complex integrated circuits.
Chinhu chakakosha pakushanda: Kushanda zvakanaka, kugadzikana, uye kumhanya kwekuchinja kwemidziyo ye semiconductor zvinoenderana zvakanyanya nekufanana uye kuchena kwedoping. Chero tsvina (senge kabhoni, okisijeni, uye zvinhu zvesimbi) zvinogona kushanda semisungo yekutakura, zvichikonzera kuwedzera kwekubuda kwemvura uye kutadza kwemidziyo. 6N boron crystalline inodzora huwandu hwekusachena kusvika padanho rezvikamu-pa-bhiriyoni (ppb), ichivimbisa kuchena kwakakwana uye kuvimbika kwekushanda kwemagetsi e semiconductor silicon.
Muchengeti wemaitiro ekupisa kwakanyanya: Nepo kunyunguduka kuri pamusoro pe2300°C, crystalline boron ine kugadzikana kwakanyanya kwekupisa. Munguva dzemaitiro akaoma akadai se silicon single crystal growth (Czochralski method) kana high-temperature diffusion/ion implantation annealing, 6N crystalline boron inochengetedza kugadzikana kwechimiro pasina kuunza volatiles dzisingatarisirwi kana zvigadzirwa zvekuora, zvichiita kuti maitiro adzorerwe uye adzokororwe.
Yakaratidzwa muzvishandiso zvepasi rose zvemazuva ano: Sarudzo yakavimbika kune vatengi vekuKorea neveJapan
Nyaya 1 (mugadziri wesilicon wafer weSouth Korean semiconductor): UrbanMines '6N boron powder (99.9999% kuchena, 2-3mm particle size) yakashandiswa sechinhu chakakosha muCzochralski single crystal furnace kuti ikure maP-type semiconductor silicon ingots emhando yepamusoro ane resistivity range chaiyo yekugadzira machipisi elogic epamusoro.
Nyaya yechipiri (mugadziri wesimbi/mudziyo wesimbi wesilicon epitaxial wekuJapan): UrbanMines yakasarudzwa kutenga 6N pure boron dopant (kuchena 99.9999%, saizi yezvikamu -4+40 mesh). Dopant iyi inoshandiswa mukukura kwe epitaxial kana kupararira kwekupisa kwakanyanya kudzora kupararira kwe boron munzvimbo ye semiconductor silicon epitaxial layer kana junction region, zvichizadzisa zvinodiwa zvemidziyo yemagetsi ine simba guru (senge IGBTs).
Kupa kweChina: Mabhenefiti e6N Crystalline Boron
Nekutarisana nekukura kuri kuita kudiwa kukuru kubva kunzvimbo dzepasi rose dze semiconductor dzakadai seSouth Korea, Japan, neUnited States, kambani yedu yakawana mabhenefiti makuru ekugadzira nekupa zvinhu zvine boron yakachena kwazvo:
1. Kubudirira kwetekinoroji uye hupfumi hwenzvimbo: Kuburikidza nekutsvaga nekuvandudza nguva dzose, kambani yedu yakabudirira mukugadzira zvinhu zvakawanda zvine β-rhombohedral boron (chimiro chakasimba kwazvo). Izvi zvinotibvumira kupa huwandu hwakazara hwemazinga ekuchena, kubva pa99% kusvika ku6N (99.9999%) uye zvakatokwira. Kugona kwedu kugadzira zvinhu zvakagadzikana kunotibvumira kusangana nemitengo mikuru kubva kuvatengi vakuru vepasi rose (sezvakaratidzwa nezvinodiwa zvedu zvemwedzi wega wega zve50kg ye amorphous boron yekushandisa solar).
2. Sisitimu yekudzora mhando yakasimba: Yakatarisana nezvinodiwa zvepasi rose zve semiconductor-grade, takagadzira sisitimu yekutarisira nekudzora yakachena kwazvo yemaitiro ese, ichisanganisira kuongorora zvinhu zvisina kugadzirwa, kugadzira reaction, kuchenesa nekunatsa (senge kunyunguduka kwenzvimbo nekunyungudutsa vacuum), kupwanya nekuyera, uye kurongedza. Izvi zvinoita kuti batch yega yega yemakristaro e6N boron ive nekuenderana kwakanaka kunoteverwa.
3. Kugona Kugadzirisa Zvinhu Zvakadzama: Kambani yedu inonzwisisa zvakadzama zvinodiwa nema semiconductor processes e boron form (granules, powders) uye particle size (semuenzaniso, D50 ≤ 10μm, -200 mesh, 1-10mm, 2-4μm, nezvimwewo). Sezvakataurwa mugwaro iri, "kugadzirwa kwezvinhu kunogonekawo kana zvinodiwa zveparticle size zvikazadzikiswa." Kupindura uku kunochinjika ndiko kunokosha pakukunda vatengi vepamusoro muSouth Korea, Japan, nedzimwe nyika.
4. Kushandira pamwe kweMaindasitiri uye Zvakanakira Mari: Tichishandisa hurongwa hwakazara hwemaindasitiri emuno nezvinhu zvekushandisa, 6N crystalline boron yedu haingovimbisi chete mhando yepamusoro asiwo ine simba repamusoro rekutengesa uye kukwikwidzana kwemitengo, ichipa rutsigiro rwakasimba, rwakavimbika, uye runoshanda pamutengo wakaderera kune indasitiri yekugadzira semiconductor yepasi rose.
Mhedziso: Zvinhu zve boron zveChina zvinotungamira mukusimbisa machipisi emangwana
Kubva kuma processor makuru emafoni kusvika kuma power chips anosimbisa "pfungwa" dzemotokari itsva dzesimba, miganhu yekushanda kwe semiconductor silicon inoramba ichitsanangurwa nekuchena uye kunyatsojeka kwe 6N crystalline boron dopants. Indasitiri ye boron yemhando yepamusoro muChina, ine hunyanzvi hwayo hwetekinoroji, kutonga kwakasimba kwemhando, kugona kugadzirisa zvinhu, uye kugona kwakasimba kwekugadzira, iri kuva chinhu chikuru chinotungamira mukuvandudzwa kwe semiconductor pasi rose.
Kusarudza mutengesi weChinese 6N boron crystal akavimbika zvinoreva kusarudza nzira yakajeka yeramangwana re semiconductor silicon. Tine hunyanzvi hwekugadzira uye mhinduro dzakagadzirirwa isu kuti tikwanise kusangana nezvinodiwa zvakanyanya zve semiconductor. Taura nesu nhasi kuti tiise simba reChinese boron rine simba uye rakarurama mumidziyo yako ye semiconductor silicon yemazuva ano!